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parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -2.2 i d @ t a = 70c continuous drain current, v gs @ -4.5v -1.8 a i dm pulsed drain current -9.0 p d @t a = 25c power dissipation 0.96 p d @t a = 70c power dissipation 0.62 linear derating factor 7.7 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 04/17/12 parameter max. units r ja maximum junction-to-ambient 130 c/w thermal resistance

www.irf.com 1 irf5850pbf hexfet power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. this dual tsop-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. with two die per package, the irf5850 can provide the functionality of two sot-23 packages in a smaller footprint. its unique thermal design and r ds(on) reduction enables an increase in current-handling capability. v dss = -20v r ds(on) = 0.135 description ultra low on-resistance dual p-channel mosfet surface mount available in tape & reel low gate charge lead-free halogen-free tsop-6 top view pd - 95506b
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -0.96a, v gs = 0v t rr reverse recovery time ??? 23 35 ns t j = 25c, i f = -0.96a q rr reverse recovery charge ??? 7.7 12 nc di/dt = -100a/ s source-drain ratings and characteristics 9.0 0.96 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle surface mounted on fr-4 board, t
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.011 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.135 v gs = -4.5v, i d = -2.2a ??? ??? 0.220 v gs = -2.5v, i d = -1.9a v gs(th) gate threshold voltage -0.45 ??? -1.2 v v ds = v gs , i d = -250 a g fs forward transconductance 3.5 ??? ??? s v ds = -10v, i d = -2.2a ??? ??? -1.0 v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 3.6 5.4 i d = -2.2a q gs gate-to-source charge ??? 0.66 ??? nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 0.83 ??? v gs = -4.5v t d(on) turn-on delay time ??? 8.3 ??? v dd = -10v t r rise time ??? 14 ??? i d = -1.0a t d(off) turn-off delay time ??? 31 ??? r g = 6.0 t f fall time ??? 28 ??? v gs = -4.5v c iss input capacitance ??? 320 ??? v gs = 0v c oss output capacitance ??? 56 ??? pf v ds = -15v c rss reverse transfer capacitance ??? 40 ??? ? = 1.0khz electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current
www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -2.2a fig 4. normalized on-resistance vs. temperature 0.1 1 10 1.2 1.6 2.0 2.4 2.8 v = -15v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -7.0v -5.0v -4.5v -2.5v -2.0v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -7.0v -5.0v -4.5v -2.5v -2.0v -1.8v -1.5v -1.2v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.2v
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 1 10 100 0 100 200 300 400 500 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -2.2a v = -10v ds v = -16v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
www.irf.com 5 fig 10. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. junction temperature 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 -i , drain current (a) d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)

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0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms !"#
6 www.irf.com fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage (v) 0.08 0.12 0.16 0.20 0.24 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = -2.2a 0246810 -i d , drain current (a) 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = -2.5v v gs = -4.5v
www.irf.com 7 fig 14. threshold voltage vs. temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.6 0.8 1.0 - v g s ( t h ) , v a r i a c e ( v ) i d = -250 a 0.001 0.010 0.100 1.000 10.000 time (sec) 0 4 8 12 16 20 24 p o w e r ( w )
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7 2007 code top w = (1-26) if preceded by last digit of calendar year part number w = we e k y = year lot w y year week wor k 03 3 2003 1 2001 2002 2 01 02 5 2005 2004 4 2006 6 04 c a b d w = (27-52) if preceded by a letter part number code reference: c = irf 5850 b = ir f 5800 a = s i3443dv i = irf5805 e = irf5852 f = irf5801 d = irf 5851 j = ir f 5806 notes : g 2007 wor k 9 2009 2008 8 2010 0 24 25 26 x y z 29 c 2003 a b 2001 ye ar y 2002 27 week 28 d 2005 e 2004 2006 f 30 c a w b d 51 k h j 2009 2008 2010 50 52 y x z dat e code -a line above the work week (as shown here) indicates lead-free -a line below the part number (as shown here) indicates cu-wire cu-wire indicator m = i r f 58 03 l = irf 5804 k = irf 5810 n = irf 5802
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www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 101n,sepulveda blvd el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/2012

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